化学气相沉积法制备碳化硅晶须(3)

[8]FITZER, E. PREPARATION OF SIC-WHISKER REINFORCED CVD-SIC[J]. JOURNAL DE PHYSIQUE IV, 1991, 1(5): 143-150

[9]陈卫武, 邹宗树, 王天明. CVD法合成SiC晶须的实验研究[J]. 金属学报, 1997,

(6):643-649.

[10]Chrysanthou A, Grieveson P, Jha A. Formation of silicon carbide whiskers and their microstructure[J]. Journal of Materials Science, 1991, 26(13):3463-3476.

[11]Leu I C, Lu Y M, Hon M H. Factors determining the diameter of silicon carbide whiskers prepared by chemical vapor deposition[J]. Materials Chemistry & Physics, 1998, 56(3):256–261.

[12]Leu I C, Lu Y M, Hon M H. Substrate effect on the preparation of silicon carbide whiskers by chemical vapor deposition[J]. Journal of Crystal Growth, 1996, 167(3):607–611.

[13]王茳, 刘兴钊, 邓新武. VLS机制下SiC晶须的生长[J]. 微纳电子技术, 2007, 44(10):943-945. DOI:10.3969/j.issn.1671-4776.2007.10.006.

[14]Han H W, Liu H S. Characterization of vapour deposited products in furnace tube during SiC synthesis from carbonized rice hulls[J]. Ceramics International, 1999, 25(7):631–637.

[15]Ci L, Ryu Z, Jin-Phillipp N Y, et al. Carbon nanotubes/SiC whiskers composite prepared by CVD method[J]. Diamond & Related Materials, 2007, 16:531–536.

[16]李军, 张翔, 廖寄乔,等. SiC晶须的原位生长及其在C/C复合材料抗氧化涂层中的应用[J].

粉末冶金材料科學與工程, 1 2010, 15:277-282.

DOI:10.3969/j.issn.1673-0224.2010.03.015.

[17]Lee Y J, Choi D J, Kim S S, et al. Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data[J]. Surface & Coatings Technology, 2004, 177:415–419.

[18]谭周建, 李军, 张翔,等. 碳化硅晶须对C/C复合材料表面SiC涂层的影响[J]. 粉末冶金材料科学与工程, 2012, 17(5):664-668.

2

bbs.99jianzhu.com内容：建筑图纸、PDF/word 流程，表格，案例，最新,施工方案、工程书籍、建筑论文、合同表格、标准规范、CAD图纸等内容。